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Atomic simulation of the 30° partial dislocation interaction with divacancy in silicon

✍ Scribed by Chaoying Wang; Qingyuan Meng

Book ID: 112182772
Publisher: John Wiley and Sons
Year: 2009
Tongue: English
Weight: 397 KB
Volume: 3
Category: Article
ISSN: 1862-6254
DOI: 10.1002/pssr.200802254

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