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Interaction of As impurities with 30° partial dislocations in Si: An ab initio investigation

✍ Scribed by Antonelli, A.; Justo, J. F.; Fazzio, A.

Book ID: 111921083
Publisher: American Institute of Physics
Year: 2002
Tongue: English
Weight: 703 KB
Volume: 91
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1466877

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