𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Atomic-scale study of boron implantation into amorphous carbon

✍ Scribed by Dai, Yongbing; Yan, Yijun; Wang, Jun; Sun, Baode; He, Xianchang; Shen, Hesheng

Book ID
118262337
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
410 KB
Volume
98
Category
Article
ISSN
0021-8979

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Diffusion of ion-implanted boron impurit
Diffusion of ion-implanted boron impurities into pre-amorphized silicon
✍ Naotsugu Ohno; Tohru Hara; Yasuhiko Matsunaga; Michael I Current; Morio Inoue πŸ“‚ Article πŸ“… 2000 πŸ› Elsevier Science 🌐 English βš– 246 KB

Boron ion implantation into pre-amorphized silicon is studied. Pre-amorphization is performed either by F + or Si + implantation prior to B + implantation at 10 keV with 3 Γ‚ 10 15 ions/cm 2 . Broadening of the boron profile can be suppressed markedly in the pre-amorphized layers. For instance, the a