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Atomic layer growth of GaAs by molecular beam epitaxy using desorption of excess Ga atoms

โœ Scribed by N Sugiyama; T Isu; T Kamijoh; Y Kajikawa; Y Katayama


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
325 KB
Volume
41
Category
Article
ISSN
0042-207X

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