Atomic layer growth of GaAs by molecular beam epitaxy using desorption of excess Ga atoms : N. Sugiyama, T. Isu, T. Kamijoh, Y. Kajikawa and Y. Katayama. Vacuum41(4–6), 915 (1990)

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 127 KB
• Volume: 31
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(91)90177-9