The formation of multi-atomic steps (step-flow growth with step-bunching) on the surface of 111-V semiconductor compounds during metal-organic vapor-phase epitaxial (MOVPE) growth is a phenomenon of considerable significance. As low-dimensional material arrangements are widely used in novel opto-and
✦ LIBER ✦
Atomic force microscopy study of (001) SrTiO3 surfaces
✍ Scribed by B. Stäuble-Pümpin; B. Ilge; V.C. Matijasevic; P.M.L.O. Scholte; A.J. Steinfort; F. Tuinstra
- Book ID
- 117216727
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 910 KB
- Volume
- 369
- Category
- Article
- ISSN
- 0039-6028
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