𝔖 Bobbio Scriptorium

✦ LIBER ✦

Athermal nature of impact exerted by ultraviolet radiation on the accumulation of radiation defects during ion implantation into silicon

✍ Scribed by A.B. Danilin; Yu.N. Erokhin; V.N. Mordkovich; N. Hatzopoulos; P.L.F. Hemment

Book ID: 113283336
Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 159 KB
Volume: 69
Category: Article
ISSN: 0168-583X
DOI: 10.1016/0168-583x(92)96017-s

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE 11th International Conference on I

[IEEE 11th International Conference on Ion Implantation Technology - Austin, TX, USA (16-21 June 1996)] Proceedings of 11th International Conference on Ion Implantation Technology - The effect of radiation defects on the localization of nitrogen implanted into silicon

✍ Danilin, A.B.; Scherbachev, K.D.; Bublik, V.T.; Saraikin, V.V. 📂 Article 📅 1997 🏛 IEEE ⚖ 265 KB

The influence of ion current density and

The influence of ion current density and target temperature on kinetics of accumulation of radiation defects at ion bombardment and on electrophysical properties of silicon doped by implantation of boron and phosphorus: V K Vasilev et al, Struct Defects in Semicon, Coll, Novosibirsk 1973, 247–250 (in Russian)

📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 162 KB