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Asymmetry of Magnetization Reversal of Pinned Layer in NiFe/Cu/NiFe/IrMn Spin-Valve Structure

✍ Scribed by Chechenin, N. G.; Chernykh, P. N.; Dushenko, S. A.; Dzhun, I. O.; Goikhman, A. Y.; Rodionova, V. V.

Book ID
121454373
Publisher
Springer
Year
2014
Tongue
English
Weight
492 KB
Volume
27
Category
Article
ISSN
0896-1107

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## Abstract Conventional NiFe/Cu/NiFe/IrMn multilayer spin‐valve structure is used for patterning planar Hall effect (PHE) sensor fabrication. The three different junctions, 50Γ—50 ΞΌm^2^, 20Γ—20 ΞΌm^2^ and 5Γ—5 ΞΌm^2^, were prepared by lithography technique for obtaining the PHE profiles. The PHE measur