Asymmetric electron tunneling into an amorphous chalcogenide semiconductor
โ Scribed by J.W. Osmun
- Publisher
- Elsevier Science
- Year
- 1973
- Tongue
- English
- Weight
- 254 KB
- Volume
- 13
- Category
- Article
- ISSN
- 0038-1098
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๐ SIMILAR VOLUMES
Tunneling time and post-tunneling position of an electron incident on a heterostructure grown on anisotropic materials are derived by solving an effective mass equation including off-diagonal effective mass tensor elements. The effects of different effective masses for a heterostructure junction are
Vertically stacked quantum point contacts (QPCs) are prepared by atomic force microscope (AFM) lithography from an asymmetric GaAs/AlGaAs double quantum well (DQW) heterostructure. Top-and back-gate voltages are used to tune the tunnel-coupled QPCs, and back-gate bias cooling is employed to investig