Materials aspects of multijunction solar
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S.A. Hussien; P. Colter; A. Dip; J.R. Gong; M.U. Erdogan; S.M. Bedair
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Article
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1991
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Elsevier Science
โ 367 KB
Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AIGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 p~m h -~. Device quality GaAs and AlxGal\_xAs films were grown with p-type background carbon do