found to occur along the rod axis. Single crystals are obtained more readily if a seed crystal is used on one side and if the initial floating liquid zone is formed at the joint with polycrystalline silicon. The floating zone is then made to travel along the polycrystalline mass while a single cryst
โฆ LIBER โฆ
Arsenides and Antimonides of Niobium
โ Scribed by FURUSETH, SIGRID; KJEKSHUS, ARNE
- Book ID
- 109637772
- Publisher
- Nature Publishing Group
- Year
- 1964
- Tongue
- English
- Weight
- 100 KB
- Volume
- 203
- Category
- Article
- ISSN
- 0028-0836
- DOI
- 10.1038/203512a0
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## Abstract In the present work the possibility is demonstrated of growing gallium antimonide epitaxial layers on indium arsenide substrates using the liquid phase epitaxial (LPE) method. The influence is nivestigated of the growth conditions on the morphology of the surface and interface of the e