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Arsenic ion implantation induced structural effects in C60 films

โœ Scribed by K.L. Narayanan; N. Kojima; K. Yamaguchi; N. Ishikawa; M. Yamaguchi

Book ID
111536780
Publisher
Springer
Year
1999
Tongue
English
Weight
563 KB
Volume
34
Category
Article
ISSN
0022-2461

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Pristine CsO films, which were sublimed onto Si( loo), were implanted with 20 keV K+ ions at a dose of 2.7x 1016/cm2. The distribution of K+ and contamination of oxygen were studied using Rutherford backscattering. The four-probe technique was used to measure the sheet resistance of the films, and t