Arriving at a unified model for hot-carrier degradation in MOSFET's through gate-to-drain capacitance measurement

✍ Scribed by Ghodsi, R.; Yew-Tong Yeow; Chung Ho Ling; Alam, M.K.

• Book ID: 114535962
• Publisher: IEEE
• Year: 1994
• Tongue: English
• Weight: 809 KB
• Volume: 41
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.337459