๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Argon ion implantation gettering of large area p-n junctions and schottky diodes

โœ Scribed by B.M. Lacquet; P.L. Swart


Book ID
113277353
Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
290 KB
Volume
6
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Electrical properties of GaSb Schottky d
โœ A.Y. Polyakov; M. Stam; A.G. Milnes; T.E. Schlesinger ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 592 KB

The electrical properties of Schottky diodes and p-n junctions on GaSb ((100), doped with 2 x 10 t7 cm-~ tellurium) were examined. Capacitance-voltage measurements at 300 K show barrier heights of 0.65 eV (Al), 0.6 eV (Au, In, Pd), 0.5 eV (Ga) and 0.42 eV (Sb). The barrier heights tend to track the