No coin nor oath required. For personal study only.
Europe has announced a new product line of CoolMOS and SiC Schottky diodes power modules in its SP4 and SP6 low profile high performing standard packages.
A range of standard modules will be offered in phase leg, full bridge and chopper configurations using 600V and 800V CoolMOS with series FRED and parallel 600V and 1200V SiC Schottky diodes.
📜 SIMILAR VOLUMES
This article presents design, realization and test results of an Schottky diode limiter with provision of adjustable threshold power level operating at 11.5 GHz. The article also presents nonlinear behavior of the Schottky diode under different bias load line conditions and suitable bias conditions
The temperature dependence of current-voltage (I-V) characteristics of as-fabricated and annealed Ni/n-type 6H-SiC Schottky diode has been investigated in the temperature range of 100-500 K. The forward I-V characteristics have been analysed on the basis of standard thermionic emission theory. It ha
## Abstract We investigate the width, spacing, and number dependencies of an Al^+^‐implanted field limiting ring (FLR) and the influence of an Al^+^‐implanted internal ring on the breakdown voltage characteristics of a silicon carbide (SiC) Schottky barrier diode (SBD). SiC‐SBDs having an Al^+^‐imp