## Abstract The fragmentation of ions sputtered from the surface of low‐density poly(ethylene) (LDPE) has been investigated by studying their collisionally activated dissociation (CAD) when incident upon a variety of target gases in the collision cell of a triple quadrupole SIMS instrument. It was
Appraisal of Sims applicability to boron studies in plants
✍ Scribed by Cedric Dérue; David Gibouin; Marie-Claire Verdus; Fabrice Lefebvre; Maurice Demarty; Camille Ripoll; Michel Thellier
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 454 KB
- Volume
- 58
- Category
- Article
- ISSN
- 1059-910X
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✦ Synopsis
Abstract
In the search for a new methodological approach applicable to the determination of the still poorly known primary role of boron in plant physiology, we have undertaken to appraise the potential of the SIMS method for the analytical imaging of the boron isotopes, ^10^B and ^11^B, at physiological concentrations in plants. With our own, CAMECA IMS4F SIMS ion analyser, and using O~2~^+^ as primary ions for the detection of B^+^ (plus ^12^C^+^ and ^40^Ca^+^) secondary ions, we have been able to map quantitatively the two boron isotopes in control and boron‐enriched plants, to evaluate boron concentrations at the level of individual cells and to determine boron isotopic ratios. This provides the opportunity to carry out the simultaneous labeling and imaging of boron, using enrichment with the stable isotopes, ^10^B and ^11^B. The method has also the potential for the simultaneous, quantitative detection of the boron isotopes and of the borate‐binding sites in plant cells. Microsc. Res. Tech. 58:104–110, 2002. © 2002 Wiley‐Liss, Inc.
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## Abstract The primary beam energy and species (Cs^+^, Ar^+^) dependence of ultra low energy SIMS depth profiles of ultra‐shallow boron implants into CVD grown diamond is investigated in this paper. The data are compared with TRIM simulation of the 5 keV ^11^B^+^ implant. Cs^+^ profiles (1 keV, 30