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Application of the storing matter technique to the analysis of boron doped and implanted SiO2/Si

✍ Scribed by C. Mansilla; T. Wirtz


Book ID
116245057
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
519 KB
Volume
258
Category
Article
ISSN
0169-4332

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In microelectronics, during fabrication of ultrashallow p-n junctions boron is implanted in a silicon monocrystal. However, the subsequent rapid thermal annealing (RTA) causes anomalous fast diffusion (transient enhanced diffusion, TED) of the boron inwards in the crystal, hindering the formation of