A small-angle cleavage technique has been developed that produces superior transmission electron microscope (TEM) samples of semiconductors and related materials. The technique involves back-thinning the sample to approximately 100 km, then scribing a groove on this back face at a specified small an
Application of the small-angle cleavage technique to thickness measurement of TEM samples
β Scribed by McCaffrey, J.P.
- Publisher
- John Wiley and Sons
- Year
- 1997
- Tongue
- English
- Weight
- 201 KB
- Volume
- 36
- Category
- Article
- ISSN
- 1059-910X
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β¦ Synopsis
In modelling transmission electron microscopy (TEM) images with the dynamical theory of electron diffraction, the sample thickness at the region of interest must be accurately known. A technique of sample preparation for cross-sectional single-crystal samples has been developed to provide this information. This technique, based on the small-angle cleavage technique, can allow a direct measurement of the sample thickness at the region where cross-sectional TEM analysis has been undertaken. Several cross-sectional samples of GaAs-based multiple quantum wells were prepared with parallel cleaved faces and thicknesses in the range of 50 to 200 nm. The samples were initially mounted so that cross-sectional images were obtained, then on suitable samples the mount was adjusted to obtain a plan view image of the same area. With suitable care, this technique provided an accurate thickness measurement of a cross-sectional region of a sample, which allowed subsequent modelling and analysis.
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