𝔖 Bobbio Scriptorium

✦ LIBER ✦

Application of the MOSFET device structure in characterizing imperfection centers in indium-doped silicon

✍ Scribed by Leonard Forbes; René Brown; Mahmood Sheikholeslam; Wayne Current

Publisher: Elsevier Science
Year: 1979
Tongue: English
Weight: 580 KB
Volume: 22
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(79)90092-3

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Application of the MOSFET device structu

Application of the MOSFET device structure in characterizing imperfection centers in indium-doped silicon : Leonard Forbes, Rene Brown, Mahmood Sheikholeslam and Wayne Current. Solid-St. Electron.22, 391 (1979)

📂 Article 📅 1979 🏛 Elsevier Science 🌐 English ⚖ 247 KB

Ideas in Chemistry and Molecular Science

Ideas in Chemistry and Molecular Sciences (Advances in Nanotechnology, Materials and Devices) || New Tools for Structure Elucidation in the Gas Phase: IR Spectroscopy of Bare and Doped Silicon Nanoparticles

✍ Pignataro, Bruno 📂 Article 📅 2010 🏛 Wiley-VCH Verlag GmbH & Co. KGaA 🌐 German ⚖ 398 KB 👁 2 views

Ideas in Chemistry and Molecular Science

Ideas in Chemistry and Molecular Sciences (Advances in Nanotechnology, Materials and Devices) || Application of Advanced Solid-State NMR Techniques to the Characterization of Nanomaterials: A Focus on Interfaces and Structure

✍ Pignataro, Bruno 📂 Article 📅 2010 🏛 Wiley-VCH Verlag GmbH & Co. KGaA 🌐 German ⚖ 639 KB