Application of the MOSFET device structure in characterizing imperfection centers in indium-doped silicon : Leonard Forbes, Rene Brown, Mahmood Sheikholeslam and Wayne Current. Solid-St. Electron.22, 391 (1979)

• Publisher: Elsevier Science
• Year: 1979
• Tongue: English
• Weight: 247 KB
• Volume: 19
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(79)90521-3