Appearance of silicon dioxide contaminant on Pt-Rh catalyst surface exposed to oxygen at high temperature

Study on preventing segregation of erbiu

Study on preventing segregation of erbium atoms to a silicon surface by annealing in oxygen atmosphere at high temperature

✍ Xifeng Qin; Ming Chen; Xuelin Wang; Gang Fu; Yi Liang; Shaomei Zhang 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 251 KB

The damage produced by implantation of Er ions of 400 keV at a fluence of 5 Â 10 15 ions/cm 2 in silicon was investigated by Rutherford backscattering spectrometry with 2.1 MeV He 2+ ions with multiple scattering models. It was found that the damage around the Si surface was almost removed after ann