Antiferromagnetic phase in doped semicon
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A. I. Veinger; A. G. Zabrodskii; T. V. Tisnek; S. I. Goloshchapov; E. N. Mokhov
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Article
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2006
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John Wiley and Sons
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English
⚖ 212 KB
## Abstract We show for __n__ ‐type semiconductors, using Ge:As and 4__H__ ‐SiC:N as examples, that the spin density measured by electron spin resonance (ESR) falls sharply near the insulator–metal (IM) transition. Two reasons might be responsible for this phenomenon: potential fluctuations with co