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Anomalous degradation in silicon solar cells subjected to high-fluence proton and electron irradiations

✍ Scribed by Morita, Yousuke; Ohshima, Takeshi; Nashiyama, Isamu; Yamamoto, Yasunari; Kawasaki, Osamu; Matsuda, Sumio


Book ID
120985804
Publisher
American Institute of Physics
Year
1997
Tongue
English
Weight
425 KB
Volume
81
Category
Article
ISSN
0021-8979

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In contrast to irradiated Si, the information on removal rates of charge carriers in irradiated SiC is meager and often contradictory. This is due to serious difficulties in crystal growth which, in turn, may have a profound effect on properties of initial materials. In the present work we compare t