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Anomalous behaviour of the electron transport on (110) and (111) silicon surfaces

โœ Scribed by G. Dorda; H. Gesch; I. Eisele


Publisher
Elsevier Science
Year
1980
Weight
113 KB
Volume
98
Category
Article
ISSN
0167-2584

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Surface electronic transport on silicon:
โœ Shuji Hasegawa; Koji Tsuchie; Keinosuke Toriyma; Xiao Tong; Tadaaki Nagao ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 136 KB

## ลฝ . ลฝ . ลฝ . Adsorptions of monovalent atoms noble and alkali metals of submonolayer coverages 0.1-0.2 ML on the Si 111 -63 =63-Ag surface commonly induced similar 621 =621 superstructures, all of which exhibited high electrical conductances. Common processes seem to work among these adsorbates