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Surface electronic transport on silicon: donor- and acceptor-type adsorbates on Si(111)-√3×√3-Ag substrate

✍ Scribed by Shuji Hasegawa; Koji Tsuchie; Keinosuke Toriyma; Xiao Tong; Tadaaki Nagao

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
136 KB
Volume
162-163
Category
Article
ISSN
0169-4332

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✦ Synopsis

Ž

. Ž . Ž . Adsorptions of monovalent atoms noble and alkali metals of submonolayer coverages 0.1-0.2 ML on the Si 111 -63 =63-Ag surface commonly induced similar 621 =621 superstructures, all of which exhibited high electrical conductances. Common processes seem to work among these adsorbates in such phenomena; the valence electrons of the adsorbates are Ž . transferred to the substrate surface-state bands carrier doping . On the contrary, adsorption of C molecules on the 60 63 =63-Ag surface reduced the conductance, presumably because conduction electrons in the surface-state band of the Ž . substrate are transferred to the molecules due to their strong electronegativity acceptor-type adsorbates .

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