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Anodically oxidized porous silicon as a substrate for EIS sensors

✍ Scribed by H. Sakly; R. Mlika; H. Chaabane; L. Beji; H. Ben Ouada


Book ID
104064031
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
125 KB
Volume
26
Category
Article
ISSN
0928-4931

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## Abstract **BACKGROUND:** Non‐uniform distribution of pore size and depth of porous Si chip for a Fabry–Perot interferometer, in a previous study, led to relatively low sensitivity with poor reproducibility when its surface was immobilized with calyx crown derivative (Prolinker A). In this study,