Annealing technology under arsenic overpressure for GaAs LSI–influence on dislocation and threshold voltage

✍ Scribed by Takashi Egawa; Yoshiaki Sano; Hiroshi Nakamura; Katsuzo Kaminishi

• Book ID: 112078165
• Publisher: John Wiley and Sons
• Year: 1988
• Tongue: English
• Weight: 697 KB
• Volume: 71
• Category: Article
• ISSN: 8756-663X
• DOI: 10.1002/ecjb.4420710402