Annealing technology under arsenic overpressure for GaAs LSI — influence on dislocation and threshold voltage: T EGAWA, Y SANO, H NAKAMURA, K KAMINISHI (Res. Lab.. Oki Electr. Ind. Co. Ltd., Hachioji, Japan) Electron. Commun. Jpn. 2. Electron. (USA), vol. 71, no. 4, pp. 10–18 (April 1988)

• Book ID: 103269767
• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 100 KB
• Volume: 20
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/0026-2692(89)90050-5