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Annealing studies on CuIn(Ga)Se2: the influence of gallium

✍ Scribed by I Dirnstorfer; W Burkhardt; W Kriegseis; I Österreicher; H Alves; D.M Hofmann; O Ka; A Polity; B.K Meyer; D Braunger


Book ID
114086911
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
260 KB
Volume
361-362
Category
Article
ISSN
0040-6090

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Crystalline defects, such as the density of voids, grain boundaries and dislocations, in Cu(In,Ga) Se2 absorber layers depend on the fabrication conditions and determine to a large extent the efficiency of photovoltaic devices. The material properties, however, can be improved significantly by using