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Effects of H+Ion Implantation and Annealing on the Properties of CuIn0.75Ga0.25Se2Thin Films

โœ Scribed by E. Ahmed; R.D. Pilkington; A.E. Hill; M. Amar; W. Ahmed; H. Taylor; M.J. Jackson

Book ID
107458102
Publisher
Springer US
Year
2007
Tongue
English
Weight
256 KB
Volume
16
Category
Article
ISSN
1059-9495

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Crystalline defects, such as the density of voids, grain boundaries and dislocations, in Cu(In,Ga) Se2 absorber layers depend on the fabrication conditions and determine to a large extent the efficiency of photovoltaic devices. The material properties, however, can be improved significantly by using