๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Annealing Characteristics and Temperature Dependence of the Photosensitive 1.9 eV Absorption Band in Zn-Treated ZnSe Crystals

โœ Scribed by Kishida, S. ;Matsuura, K. ;Nagase, H. ;Tsurumi, I.


Publisher
John Wiley and Sons
Year
1987
Tongue
English
Weight
393 KB
Volume
103
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Effect of Fast Electron Irradiation and
โœ Dr. K. D. Glinchuk; V. I. Guroshev; A. V. Prokhorovich; N. S. Zayats ๐Ÿ“‚ Article ๐Ÿ“… 1986 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 427 KB

Irradiation-induced 1.26 and 1.39 eV Emiwion Bands1) The effect of 2.2 MeV electron irradiation and subsequent annealings on the photoluminescence in zinc-doped p-type GaAs crystals is studied and analyzed. Rather strong emission bands peaked a t hv, (77 K ) near 1.26 eV (induced by electron irradi