Annealing Behaviour of Deuterium in Silicon Doped Carbon Films

✍ Scribed by J. Likonen; E. Vainonen-Ahlgren; T. Ahlgren; S. Lehto; T. Sajavaara; W. Rydman; J. Keinonen; J. Katainen; C.H. Wu

• Publisher: John Wiley and Sons
• Year: 2002
• Tongue: English
• Weight: 132 KB
• Volume: 42
• Category: Article
• ISSN: 0005-8025
• DOI: 10.1002/1521-3986(200204)42:2/4<445::aid-ctpp445>3.0.co;2-p

✦ Synopsis

Annealing behaviour of deuterium in carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary ion mass spectrometry and elastic recoil detection techniques. A model taking into account diffusion, detrapping and trapping of D is used to describe the experimental depth profiles. Diffusion coefficients obtained for non-trapped D resulted in activation energies of 1.5 ± 0.2, 0.7 ± 0.2, 0.6 ± 0.2 and 1.2 ± 0.2 eV for samples containing 0, 6, 15 and 33 at.% of Si, respectively.