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Annealing behaviour in vacuum-deposited films of silicon oxide

โœ Scribed by A.R. Morley; D.S. Campbell

Publisher
Elsevier Science
Year
1968
Tongue
English
Weight
523 KB
Volume
2
Category
Article
ISSN
0040-6090

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๐Ÿ“œ SIMILAR VOLUMES

Annealing Behaviour of Deuterium in Sili
Annealing Behaviour of Deuterium in Silicon Doped Carbon Films
โœ J. Likonen; E. Vainonen-Ahlgren; T. Ahlgren; S. Lehto; T. Sajavaara; W. Rydman; ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 132 KB

Annealing behaviour of deuterium in carbon films with different Si contents deposited by a pulsed arc discharge method in deuterium atmosphere was studied. The concentration profiles of D were measured by secondary ion mass spectrometry and elastic recoil detection techniques. A model taking into ac