๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Annealing behaviour of a-axis sapphire amorphized by high dose indium ion implantation

โœ Scribed by D.K. Sood; D.X. Cao


Book ID
113281109
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
915 KB
Volume
46
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


The formation of buried layers by high-d
โœ A. De Veirman; J. Van Landuyt ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 278 KB

The availability of high-current implanters, now makes it possible to perform high-dose ion-implantations. By modifying the implant species, dose, energy and substrate temperature and by choosing the suitable thermal annealing conditions buried layers below a monocrystalline Si overlayer can be for