Annealing behavior of TiO2-sheathed Ga2O3nanowires
โ Scribed by Changhyun Jin; Hyunsoo Kim; Kyungjoon Baek; Hyoun Woo Kim; Chongmu Lee
- Publisher
- Springer US
- Year
- 2009
- Tongue
- English
- Weight
- 508 KB
- Volume
- 21
- Category
- Article
- ISSN
- 0957-4522
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๐ SIMILAR VOLUMES
## Abstract The defect structures of ฮฒโGa~2~O~3~ nanowires were characterized using transmission electron microscopy (TEM). Branched and jagged ฮฒโGa~2~O~3~ nanowires were obtained by the heat treatment of gallium metal with Cu~5~Si powders. The growth direction of the branched nanowire is perpendic
Ga 2 O 3 /SnO 2 coaxial nanowires were synthesized by thermal evaporation of GaN powders and then atomic layer deposition of SnO 2 . Transmission electron microscopy (TEM) and X-ray diffraction (XRD) analysis results indicate that the Ga 2 O 3 cores and the SnO 2 shells of the coaxial nanowires afte