In the presence of a strong magnetic field (B) applied perpendicular to the interface of a two-dimensional electron system (2DES), the density of states for a 2D electron gas differs sharply from that at zero-magnetic field, which results in the total number of electrons in the structure differing f
Anisotropy of the effective Landé factor in AlxGa1−xAs parabolic quantum wells under applied magnetic fields
✍ Scribed by A. Bruno-Alfonso; N. Raigoza; E. Reyes-Gómez
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 290 KB
- Volume
- 43
- Category
- Article
- ISSN
- 1386-9477
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✦ Synopsis
The anisotropy of the effective Lande ´factor in Al x Ga 1 À x As parabolic quantum wells under magnetic fields is theoretically investigated. The non-parabolicity and anisotropy of the conduction band are taken into account through the Ogg-McCombe Hamiltonian together with the cubic Dresselhaus spinorbit term. The calculated effective g factor is larger when the magnetic field is applied along the growth direction. As the well widens, its anisotropy increases sharply and then decreases slowly. For the considered field strengths, the anisotropy is maximum for a well width $ 50 Å. Moreover, this anisotropy increases with the field strength and the maximum value of the aluminum concentration within the quantum well.
📜 SIMILAR VOLUMES
We use the Ogg-McCombe Hamiltonian together with the Dresselhaus and Rashba spin-splitting terms to find the g factor of conduction electrons in GaAs-(Ga,Al)As semiconductor quantum wells (QWS) (either symmetric or asymmetric) under a magnetic field applied along the growth direction. The combined e