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Anisotropy effect of high-momentum of ADAP in diamond-like semiconductors

โœ Scribed by N. Arutyunov; A. Baltenkov; I. Segal


Publisher
John Wiley and Sons
Year
1988
Tongue
English
Weight
414 KB
Volume
23
Category
Article
ISSN
0232-1300

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Effect of high electronic excitation in
โœ W. Wesch; A. Kamarou; E. Wendler; A. Undisz; M. Rettenmayr ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 413 KB

The damage evolution due to high electronic energy deposition during 375 MeV Xe and 593 MeV Au ion irradiation was studied in the semiconductors InP, GaP, GaAs, AlAs and Ge using RBS and TEM. In InP the high electronic energy deposition leads to the formation of amorphous tracks. In the other materi