Critical current densities J~ and normalized flux creep rate S(-dlnM/dln t) have been measured as a function oi the perpendicular field HI in low-To Pb/Ge multilayers, which can be used to model the superconducting properties of the layered high-T~ cuprates. By taking a proper Ge separator thickness
Anisotropy and magnetic field dependence of critical currents in Pb/Ge multilayers
β Scribed by D. Neerinck; K. Temst; M. Dhalle; C. Van Haesendonck; Y. Bruynseraede; A. Gilabert; Ivan K. Schuller; T. Krekels; G. Van Tendeloo
- Book ID
- 104356821
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 252 KB
- Volume
- 165-166
- Category
- Article
- ISSN
- 0921-4526
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β¦ Synopsis
We have measured critical currents in Pb/Ge multilayers as a function of direction and magnitude of a magnetic field ning at the Pb Ge interfaces.
The critical current as a function of a perpendicular field displays a pronounced P erpendicular to the current. The higher J, for a field parallel to the layers indicates flux pinmaximum at low fields. TEM reveals Pb nrain sizes of about 1000 A and indicates that the enhanced flux pinning may be explained by grain bound&y pinning.
π SIMILAR VOLUMES
Magnetization studies of critical currents J~(HΒ±,T) and of the flux creep rate dlnM/dlnt have been carried out on low T~ Pb/Ge multilayers, which can be used to model the superconducting properties of the layered high Tc cuprates. By taking a proper Ge separator thickness a crossover between two dif
It is shown, within a simple model calculation, that the critical current density of an S/N/S junction in a high paralel magnetic field decays exponentially. The comparison of the theoretical results with experimental data for the Pb/Cd/Pb junction and YBCO films is given.