✦ LIBER ✦

Anion-sensitive field effect transistors based on polyion complex bilayers

✍ Scribed by Keiichi Kimura; Masataka Matsute; Masaaki Yokoyama

Publisher: Elsevier Science
Year: 1991
Tongue: English
Weight: 554 KB
Volume: 252
Category: Article
ISSN: 0003-2670
DOI: 10.1016/0003-2670(91)87194-c

No coin nor oath required. For personal study only.

✦ Synopsis

Polyion complex bilayers made of dioctadecyldimethylammonium poly(styrene sulphonate) were tested for their usefulness as anion-sensing membranes of ion-sensitive field effect transistors (ISFETs). Doping of the polyion complex with the corresponding quaternary ammonium chloride enhanced the sensitivity of the anion ISFET. Anion ISFETs based on the ammonium-doped polyion complex showed a near-Nemstian response in the Cl-activity range 0.1-l x 10m4 M. Annealing of bilayer membranes at a temperature higher than its crystal-to-liquid crystal transition temperature improved to some extent the selectivity for Clwith respect to other anions. Doping of the polyion complex with the corresponding quatemary ammonium perchlorate also afforded ClO;-sensitive membranes for ISFETs.

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