Properties of oxidized silicon as determ
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J.M. Hill; D.G. Royce; C.S. Fadley; L.F. Wagner; F.J. Grunthaner
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Article
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1976
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Elsevier Science
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English
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## Silicon with thermally-grown oxide overlayers m the thickness range IS-89 A IS studied by angulardcpendent XPS. Electron attenuation lengths at 1382 eV are found to be 37 +-4 A in SiOz and 27 +-6 A in Si. Single-crystal effects and thin-layer anomalies are also discussed.