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Analytical threshold voltage model for ultrathin SOI MOSFETs including short-channel and floating-body effects

โœ Scribed by Adan, A.O.; Higashi, K.; Fukushima, Y.


Book ID
114537677
Publisher
IEEE
Year
1999
Tongue
English
Weight
395 KB
Volume
46
Category
Article
ISSN
0018-9383

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Analytical model for threshold voltage a
โœ Abhinav Kranti; S. Haldar; R.S. Gupta ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 417 KB

The present paper proposes an analytical model of threshold voltage and current voltage characteristics for short channel fully depleted cylindrical / surrounding gate MOSFET based on the solution of Poisson's equation in cylindrical coordinates. The analysis takes into account the field-dependent m