𝔖 Bobbio Scriptorium

✦ LIBER ✦

Analytical one-dimensional current-voltage model for FD SOI MOSFETs including the effect of substrate depletion

✍ Scribed by Pandey, Rahul; Dutta, Aloke K.

Book ID: 121625986
Publisher: Springer
Year: 2013
Tongue: English
Weight: 258 KB
Volume: 47
Category: Article
ISSN: 1063-7826
DOI: 10.1134/S1063782613090182

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Analytical two-dimensional modeling for

Analytical two-dimensional modeling for potential distribution and threshold voltage of the short-channel fully depleted SOI (silicon-on-insulator) MOSFET

✍ Vaneeta Aggarwal; Manoj K. Khanna; Rachna Sood; Subhasis Haldar; R.S. Gupta 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 453 KB

The effect of series resistance on thres

The effect of series resistance on threshold voltage measurement techniques for fully depleted SOI MOSFETs

✍ S.P. Wainwright; S. Hall; D. Flandre 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 456 KB

A simple analytical model for the front

A simple analytical model for the front and back gate threshold voltages of a fully-depleted asymmetric SOI MOSFET

✍ Chung Ha Suh 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 688 KB

Threshold Voltage model for mesa-isolate

Threshold Voltage model for mesa-isolated small geometry fully depleted SOI MOSFETs based on analytical solution of 3-D Poisson's equation

✍ Katti, G.; DasGupta, N.; DasGupta, A. 📂 Article 📅 2004 🏛 IEEE 🌐 English ⚖ 324 KB

[IEEE The 16th International Conference

[IEEE The 16th International Conference on Microelectronics, 2004. ICM 2004. - Tunis, Tunisia (Dec. 6-8, 2004)] Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004. - Two-dimensional analytical modeling and simulation of the potential and threshold voltage of a new fully depleted dual metal gate SOI MESFET

✍ Hashemi, P.; Behnam, A.; Fathi, E.; Afzali-Kusha, A. 📂 Article 📅 2004 🏛 IEEE ⚖ 536 KB

[IEEE 2012 13th International Conference

[IEEE 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Grenoble, France (2012.03.6-2012.03.7)] 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - 2D analytical potential modeling of junctionless DG MOSFETs in subthreshold region including proposal for calculating the threshold voltage

✍ Holtij, Thomas; Schwarz, Mike; Kloes, Alexander; Iniguez, Benjamin 📂 Article 📅 2012 🏛 IEEE ⚖ 838 KB