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Analytical Models for Drain Current and Gate Capacitance in Amorphous InGaZnO Thin-Film Transistors With Effective Carrier Density

✍ Scribed by M. Bae; Y. Kim; D. Kong; H. K. Jeong; W. Kim; J. Kim; I. Hur; D. M. Kim; D. H. Kim

No coin nor oath required. For personal study only.

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