✦ LIBER ✦

Analytical modeling of the substrate effect on accumulation-mode SOI pMOSFETs at room temperature and at 77 K

✍ Scribed by Marcelo Antonio Pavanello; João Antonio Martino; Jean-Pierre Colinge

Book ID: 104306456
Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 233 KB
Volume: 36
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(97)00083-x

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✦ Synopsis

In this work a theoretical and experimental analysis of the substrate effect on fully depleted accumulation-mode silicon-on-insulator (SOI) pMOSFETs at room and at liquid nitrogen temperatures is presented. The theoretical results are compared with MEDICI numerical bidimensional simulations in order to validate the proposed model. The substrate influence on the SOI pMOSFET front threshold voltage is given. Finally, a comparison between modeled and experimental data is realized.

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