Analytical model of drain current of strained-Si/strained-Si1−YGeY/relaxed-Si1−XGeX NMOSFETs and PMOSFETs for circuit simulation

✍ Scribed by B. Bindu; Nandita DasGupta; Amitava DasGupta

• Book ID: 118501225
• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 372 KB
• Volume: 50
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/j.sse.2006.01.003