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Simulation of bandgap narrowing and incomplete ionization in strained Si1−xGex alloys on 〈001〉 Si substrate (for temperatures from 40 K up to 400 K)

✍ Scribed by Yevgeny V. Mamontov; Magnus Willander


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
876 KB
Volume
38
Category
Article
ISSN
0038-1101

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