Analytical model of drain current of Si/SiGe heterostructure p-channel MOSFETs for circuit simulation

✍ Scribed by Bindu, B.; DasGupta, N.; DasGupta, A.

• Book ID: 114618280
• Publisher: IEEE
• Year: 2006
• Tongue: English
• Weight: 323 KB
• Volume: 53
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2006.874242