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Analytical model for reverse characteristics of 4H–SiC merged PN–Schottky (MPS) diodes

✍ Scribed by Qing-Wen, Song; Yu-Ming, Zhang; Yi-Men, Zhang; Hong-Liang, Lü; Feng-Ping, Chen; Qing-Li, Zheng


Book ID
125521998
Publisher
IOP Publishing
Year
2009
Tongue
English
Weight
210 KB
Volume
18
Category
Article
ISSN
1674-1056

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Study of reverse recovery characteristic
✍ Syuji Ogata; Daisuke Takayama; Katsunori Asano; Yoshitaka Sugawara 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 725 KB

## Abstract 3‐kV, 600‐A, 4H‐SiC flat package type pn diodes have been developed and their reverse recovery characteristics have been investigated. In spite of being pn junction diodes, the developed diodes have a short reverse recovery time of 0.153µs at room temperature. These diodes have one‐tent