Analytical device model for graphene bilayer field-effect transistors using weak nonlocality approximation

✍ Scribed by Ryzhii, V.; Ryzhii, M.; Satou, A.; Otsuji, T.; Mitin, V.

• Book ID: 120264641
• Publisher: American Institute of Physics
• Year: 2011
• Tongue: English
• Weight: 739 KB
• Volume: 109
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.3560921