๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Analytical charge control model for GaAs/AlGaAs-based multiple-quantum-well power hemts

โœ Scribed by M. Nawaz; Geir U. Jensen


Publisher
John Wiley and Sons
Year
1996
Tongue
English
Weight
687 KB
Volume
11
Category
Article
ISSN
0895-2477

No coin nor oath required. For personal study only.

โœฆ Synopsis


We haue deueloped an analytical charge control model for GaAs / AlGaAs multiple-quantum-well (MQ W-) based high-electron-mobility transistors. The valid$ of the deuelnped model was tested with numerical calculations based on self consistent solutions of Poisson and Schriidinger equations. Excellent agreement was achieued with both numerical calculations and experimental data. Furthermore, simple ex- pressions are deueloped for the location of sheet charge density fiom the top and bottom interfaces inside the GaAs quantum well. The developed modelprouides a good tool for the design und optimization of microwave circuit design.


๐Ÿ“œ SIMILAR VOLUMES


Accurate charge-control model for analys
โœ Vandana Guru; H. P. Vyas; Mridula Gupta; R. S. Gupta ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 154 KB

## Abstract An accurate chargeโ€control approach to analytical noise modeling of a high electron mobility transistor, which provides excellent results in agreement with the experimental data, is presented. The smallโ€signal parameters, and the drain and gateโ€noise sources are calculated to determine