Analytical charge control model for GaAs/AlGaAs-based multiple-quantum-well power hemts
โ Scribed by M. Nawaz; Geir U. Jensen
- Publisher
- John Wiley and Sons
- Year
- 1996
- Tongue
- English
- Weight
- 687 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
โฆ Synopsis
We haue deueloped an analytical charge control model for GaAs / AlGaAs multiple-quantum-well (MQ W-) based high-electron-mobility transistors. The valid$ of the deuelnped model was tested with numerical calculations based on self consistent solutions of Poisson and Schriidinger equations. Excellent agreement was achieued with both numerical calculations and experimental data. Furthermore, simple ex- pressions are deueloped for the location of sheet charge density fiom the top and bottom interfaces inside the GaAs quantum well. The developed modelprouides a good tool for the design und optimization of microwave circuit design.
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## Abstract An accurate chargeโcontrol approach to analytical noise modeling of a high electron mobility transistor, which provides excellent results in agreement with the experimental data, is presented. The smallโsignal parameters, and the drain and gateโnoise sources are calculated to determine